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Photo Receiver Product List

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Variable Gain Photo Receiver (OE-200 Series)

Variable Gain Photo Receiver (OE-200 Series)

A gain-variable photoreceiver optimal for high-speed measurement of various weak lights.

- The conversion efficiency can be set from a range of 10^3 to 10^11 V/W, and AC/DC coupling can also be changed. - It can be controlled both manually and via PC with optical isolation remote. - With a low-noise multi-stage amplifier design and a switchable 10Hz low-pass filter, it can measure optical power down to a minimum range of 100 fW with high accuracy, eliminating the need for signal averaging. - High stability, reduced drift, and calibration based on NIST standards ensure accurate measurements with high stability even at maximum gain settings. - It is ideal for high-speed photodetectors and lock-in amplifier systems in industrial process management and quality inspection systems. - The maximum bandwidth is 500 kHz, making it suitable for time-resolved measurements down to sub-microseconds.

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2GHz Photo Receiver (HSA-X-S Series)

2GHz Photo Receiver (HSA-X-S Series)

A high-performance 2GHz photoreceiver that combines cutting-edge photodiode technology with GHz amplifiers from Femto.

- The diode type is made of Si/InGaAs, with wavelength ranges of 320–1000nm/850–1700nm respectively. - The Si model HSA-X-S-1G4-SI has a ball range placed on the front of the detector chip, with an active area diameter of 0.8mm. - The transimpedance is 5×10^3 V/A. - The minimum NEP is only 14pW/vHz, making it measurable even at μW range optical power levels.

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1.5µm wavelength CW linewidth 3kHz, 15W fiber laser

1.5µm wavelength CW linewidth 3kHz, 15W fiber laser

This is a single-frequency continuous wave laser using a self-developed fiber DFB module with a wavelength of 1550 nm, a linewidth of 3 kHz, and an average power of 15 W.

Manufacturer: Connet Laser Technology (China) Narrow linewidth, high power, high-quality beam. Connet's "CoSF-D" is a low-noise single-frequency fiber laser using DFB technology. It achieves high output with single frequency, linear polarization, and narrow linewidth through unique technology. The unit introduced here has a wavelength of 1550 nm, an ultra-narrow linewidth of 3 kHz, and an average power of 15 W. The CoSF-D also boasts excellent performance in terms of phase noise and RIN. Its unique packaging technology enables a low-noise DFB single-frequency fiber laser with outstanding wavelength stability. It is offered at a reasonable price. ------------------------------------------------------ Features ------------------------------------------------------ ● Ultra-narrow linewidth < 5 kHz ● Wavelength selectable from 1530 - 1572 nm ● Maximum average power of 50 W ● Ultra-low phase noise and frequency noise ● RIN @10MHz: -155 dBc/Hz (typ.)

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High-speed photodiode and photoreceiver compatible with a wavelength of 2 microns.

High-speed photodiode and photoreceiver compatible with a wavelength of 2 microns.

It is a photodiode and photoreceiver that supports wavelengths from 1200 to 2200 nm and a bandwidth of up to 22 GHz.

Manufacturer: Discovery Semiconductors (USA) Discovery has been successful for many years in the commercialization of high-speed, 2.2µm cutoff, and cooling-free InGaAs SWIR photoreceivers. In February 2002, they released a PIN+TIA photoreceiver for the LIDAR community, and in 2012, they expanded their product lineup to include high-speed photodiodes up to 20GHz and linear balanced photoreceivers up to 18GHz. These products are creating new applications in various fields such as biomedical and environmental sensors. ------------------------------------------------------ Product Lineup ------------------------------------------------------ ● 2.2µm InGaAs photodiode - high power support up to 5GHz ● 2.2µm InGaAs photodiode - high-speed band up to 20GHz ● 2.2µm photoreceiver

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Up to 50GHz, high-speed photodiode, photoreceiver

Up to 50GHz, high-speed photodiode, photoreceiver

It is a photodiode and photoreceiver that supports wavelengths from 800 to 1650 nm and bandwidths up to 50 GHz.

Manufacturer: Discovery Semiconductors (USA) In 1997, at the Optical Fiber Communication Conference (OFC) held in Dallas, Texas, we announced the first commercially available 40 Gb dual-depletion InGaAs/InP p-i-n photodiode. Since then, we have developed cutting-edge products such as balanced photodiodes for 40 Gb and ultra-fast photodiodes with speeds up to 60 GHz. ------------------------------------------------------ Product Lineup ------------------------------------------------------ ● InGaAs PIN Photodiode: ~60 GHz ● (PIN or APD) + TIA Photoreceiver: ~56 Gbaud ● Balanced PIN Photodiode: 40 Gb/s ● Balanced PIN + (TIA or LNA) Photoreceiver: 40 G DPSK・DQPSK

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Femto-watt photoreceiver (FWPR series)

Femto-watt photoreceiver (FWPR series)

FEMTO Messtechnik GmbH is a leading manufacturer of low-noise amplifier modules.

■FWPR-20 - A photoreceiver combined with a low-noise Si/InGaAs photodiode and a very high-gain (maximum: 10^12 V/A) low-noise transimpedance amplifier. - Achieves a very low NEP value (minimum: 0.7 fW/√Hz) and high sensitivity in the femtowatt range. - For detection with the photoreceiver alone, it can detect optical power down to approximately 50 fW, and when combined with a Femto lock-in amplifier, it achieves high sensitivity in the sub-femtowatt range. - Due to its very high sensitivity, it can be used in many applications. - It can be used as an alternative to APD, PMT, and cooled Ge photodiodes without the need for expensive high-voltage power supplies or cooling devices.

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400MHz Photo Receiver (HCA-S-400 Series)

400MHz Photo Receiver (HCA-S-400 Series)

400MHz photoreceiver combining high-speed photodiode technology and high-speed current amplifier from Femto.

- There are two types of diodes: Si and InGaAs, with wavelength ranges of 320–1000nm and 900–1700nm, respectively. - The transimpedance is 5×10^3 V/A, and the maximum conversion gain for the InGaAs model at 1550nm is 5×10^3 V/W. - The sophisticated DC-coupled multi-stage amplifier design allows for measurements with a bandwidth of DC–400MHz, corresponding to a minimum rise time of 1ns. - Due to low noise, measurements can be taken without averaging even with light levels of a few μW. - The input can be free space or fiber coupled.

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400kHz photoreceiver (LCA-S-400 series)

400kHz photoreceiver (LCA-S-400 series)

A large-diameter 400kHz photoreceiver that combines cutting-edge photodiode technology with low-noise current amplifier technology.

■The photodiodes used are made of Si or InGaAs, with wavelength ranges of 400–1050nm and 900–1700nm, respectively. ■The transimpedance is 10^7 V/A, and the maximum conversion gain is 9.5×10^6 V/W at 1550nm for the InGaAs model. ■The minimum NEP is approximately 75 fW/√Hz, allowing for the measurement of light signals in the nanowatt range without unnecessary averaging.

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Variable Gain Photoreceiver (OE-300 Series)

Variable Gain Photoreceiver (OE-300 Series)

The OE-300 photo receiver consists of a premium quality photodiode followed by a high-end variable gain transimpedance amplifier.

- The low noise performance (NEP) is excellent, particularly setting a benchmark for wideband photoreceivers with gain settings in the high and mid-frequency ranges. - The relatively large size of the detector facilitates optical alignment, and when using the Si model with the optionally available fiber optic adapter PRA-FC/SMA, it also guarantees very high coupling efficiency. - The switchable gain of 102 to 108 V/A (in decimal units) allows for accurate and reliable measurements over a very wide dynamic range, from nanowatts to a maximum of 10 mW of optical power. - With many additional features such as a switchable low-pass filter, offset adjustment, switchable AC/DC coupling, and manual and opto-isolated remote control functions via PC, the OE-300 is the most versatile wideband photoreceiver in its class.

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200MHz Photo Receiver (HCA-S-200 Series)

200MHz Photo Receiver (HCA-S-200 Series)

200MHz photoreceiver combining high-speed photodiode technology and high-speed current amplifier from Femto.

- There are two types of diodes: Si-based and InGaAs-based, with wavelength ranges of 320–1000nm and 900–1700nm, respectively. - The transimpedance is 2×10^4 V/A, and the maximum conversion gain for the InGaAs model at 1550nm is 2×10^4 V/W. - Thanks to a sophisticated DC-coupled multi-stage amplifier design, measurements with a bandwidth of DC–200MHz corresponding to a minimum rise time of 1.8ns are possible. - The minimum NEP value is approximately 6pW/√Hz, allowing for the detection of optical power signals in the μW range without unnecessary averaging.

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